| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To adjust the threshold voltage to a prescribed level by controlling the thickness of the semiconductor layer when the MIS-type semiconductor device is formed to the semiconductor layer grown on the insulator substrate. |
| 申请公布号 |
JPS53118375(A) |
申请公布日期 |
1978.10.16 |
| 申请号 |
JP19770033158 |
申请日期 |
1977.03.25 |
| 申请人 |
FUJITSU LTD |
发明人 |
TOUGEI YOSHIIKU;SASAKI NOBUO |
| 分类号 |
H01L27/088;H01L21/8236;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
