| 发明名称 |
PRODUCTION OF GALLIUM ARSENIDE LIGHT EMITTING DIODE |
| 摘要 |
PURPOSE:To make an LED of about 4% of emission efficiency and about 200nsec or under of attenuation time by diffusing Zn after liquid phase epitaxial growth of n type GaAs containing Si on a GaAs substrate of n type. |
| 申请公布号 |
JPS53117391(A) |
申请公布日期 |
1978.10.13 |
| 申请号 |
JP19770031581 |
申请日期 |
1977.03.24 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
WATANABE YUKIO;USHIZAWA JISABUROU;IIDA MASAYUKI |
| 分类号 |
H01L21/22;H01L33/30;H01L33/40 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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| 地址 |
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