Interdigitated combined IGFET output stage - has drain tines of first FET between source tines of both FETs

摘要

The interdigitated output stage is intended for CMOS field-effect transistors and forms a conductor-insulator-semiconductor combination. It concerns a pair of complementary field-effect transistors, in which the first transistor drain tines are located between the source tines of both transistors. Preferably the second field-effect transistor is formed in a bounded substrate region, or a potential well of first conductivity. The source tines of the second transistor may be provided between the boundary of the well, or bounded region, and this transistor drain tines. If the first transistor is of p-chennel type, the second transistor of n-channel type, the well is of p-conductivity.