| 发明名称 |
STABILIZED DROPLET METHOD OF MAKING DEEP DIODES |
| 摘要 |
<p>Erratic electrical properties of semiconductor devices made by the thermal gradient zone melting method can result from physical instability of the migrating metal-rich liquid droplets. By limiting droplet size to a maximum cross-sectional dimension of one millimeter, this cause of defective devices can be eliminated.</p> |
| 申请公布号 |
CA1040076(A) |
申请公布日期 |
1978.10.10 |
| 申请号 |
CA19740212548 |
申请日期 |
1974.10.29 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
CLINE, HARVEY E.;ANTHONY, THOMAS R. |
| 分类号 |
C30B13/00;C30B13/10;H01L21/208;H01L21/24;H01L29/00;(IPC1-7):01J17/10 |
主分类号 |
C30B13/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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