发明名称 |
Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction |
摘要 |
A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the crystal. A silicon single crystal is exposed to a pattern of radiation with neutrons according to the reaction 30Si (n, gamma ) 31Si beta --> 31P. The neutron radiation causes a weaker doping concentration in marginal regions of the crystals due to the production of fewer phosphorus atoms. Either p-conductive silicon crystals or n-conductive silicon crystals may be utilized as an initial material for exposure to the neutron radiation.
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申请公布号 |
US4119441(A) |
申请公布日期 |
1978.10.10 |
申请号 |
US19760731440 |
申请日期 |
1976.10.12 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HAAS, ERNST;PLATZOEDER, KARL;SCHNOELLER, MANFRED |
分类号 |
H01J17/40;C30B31/20;(IPC1-7):H01L21/26 |
主分类号 |
H01J17/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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