| 发明名称 |
MEMORY TYPE VARIABLE CAPACITIVE DEVICE |
| 摘要 |
<p>PURPOSE:To obtain a non-volatile variable capacitive device wherein memory functions are provided to variable capacitive elements per se by forming (n) diodes of defined areas on the insulation layer having a charge storage function provided on a semiconductor substrate and varying respective capacity values.</p> |
| 申请公布号 |
JPS53115185(A) |
申请公布日期 |
1978.10.07 |
| 申请号 |
JP19770030686 |
申请日期 |
1977.03.17 |
| 申请人 |
SANYO ELECTRIC CO |
发明人 |
HASEGAWA YUZURU |
| 分类号 |
G11C17/04;G11C11/34;G11C17/00;H01L21/822;H01L27/04;H01L29/94;H03J7/08 |
主分类号 |
G11C17/04 |
| 代理机构 |
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