Epitaxial growth of periodic semiconductor structures - from gaseous phase on revolving heated discs with substrates and sources

摘要

Appts. consists of a reactor with two fcing discs, each with its own gear motor drive. One disc carried the substrate wafers and the other carries two sources of p-type and n-type semiconductors. The drive motor of the upper disc has also a feedscrew mechanism to vary the distance between the two discs. Heaters are arranged to produce an isothermal temp. field parallel to the active surfaces of the discs. The amt. of material, applied to a substrate in alternate layers can be controlled very precisely within a range 50-10000 angstroms. The accuracy and the lower doping limit does not depend on the reactor volume or on the number of simultaneously treated substrates so that a high throughput is ensured without quality deterioration. Solid monolithic and powdery semiconductors are equally suitable as sources.