| 摘要 |
1527106 Etching TELETYPE CORP 9 Oct 1975 [10 Oct 1974] 41356/75 Heading B6J A layer of SiO 2 is etched with buffered HF, e.g. HF + NH 4 F, the underlying aluminium layer being passivated by the HF. The passivated layer is then treated with a substantially HF-free solution of NH 4 F to prevent deterioration thereof. Etching of the SiO 2 may be through apertures in a photoresist mask. |
