| 发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To readily remove contact defect by gas flow in a C-MOS IC by making positive use of the junction short phenomenon of shallow diffused layers by Al electrode wirings. |
| 申请公布号 |
JPS53113482(A) |
申请公布日期 |
1978.10.03 |
| 申请号 |
JP19770028246 |
申请日期 |
1977.03.15 |
| 申请人 |
FUJITSU LTD |
发明人 |
INAYOSHI KATSUYUKI;SHINGUU MASATAKA |
| 分类号 |
H01L21/28;H01L21/8238;H01L27/092;H01L29/43;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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