| 摘要 |
PURPOSE:To form an upper layer resist pattern which is vertical in profile and has no scum by executing a descum treatment after patterning. CONSTITUTION:The desired CMS (chrolo-methyl-stylene) resist pattern 4 is formed by exposing a CMS film 3 by using an excimer layer and developing the film and thereafter, the descum treatment is executed. Unnecessary org. matter is, therefore, removed and the CMS resist pattern 4 is trimmed by which the good pattern having no scum is obtd.; in addition, the crosslinking in the surface part of the CMS resist pattern 4 is progressed by the UV light radiated during discharge. Further, the crosslinking of the CMS resist pattern 4 is progressed by executing a heating and baking treatment to increase the absorption coefft. of light. A PMCI (polymethyl-glutarimide) film 2 is exposed over the entire surface by using the CMS resist pattern 4 as a mask and thereafter, the part where the PMGI film 2 is photodecomposed is dissolved away by an alkaline developing soln. The fine patterns of the two-layered resists are accurately formed in this way. |
