| 发明名称 |
METHOD FOR REDUCED PRESSURE VAPOR GROWTH |
| 摘要 |
PURPOSE:To improve flow of gas by opening a hole in part of substrates, inserting a bar therein to support the substrates and performing reduced pressure vapor growth. |
| 申请公布号 |
JPS53113476(A) |
申请公布日期 |
1978.10.03 |
| 申请号 |
JP19770028473 |
申请日期 |
1977.03.14 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
TANNO YUKINOBU |
| 分类号 |
C23C16/24;C23C16/455;H01L21/205;H01L21/31 |
主分类号 |
C23C16/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
