| 发明名称 |
READOUT CIRCUIT OF SEMICONDUCTOR MEMORY |
| 摘要 |
PURPOSE:To make higher in the readout operation speed, by quickering the change in the clock signal even to gentle change in the input signal waveform, through keeping the line voltage high for a given period and also the logic threshold voltage high for the input signal. |
| 申请公布号 |
JPS53113436(A) |
申请公布日期 |
1978.10.03 |
| 申请号 |
JP19770028291 |
申请日期 |
1977.03.15 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
TAKEYA TAKESHI |
| 分类号 |
G11C11/41;G11C7/00;G11C11/419 |
主分类号 |
G11C11/41 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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