发明名称 ETCHING METHOD FOR INSULATING FILM
摘要 PURPOSE:To surely obtain thru-holes several mum square, by etching polyimide or PIQ resin with the etching solution including the polyamino compound represented with the generic equation of NH2 - R - NH2 (where; R is an atomic group including at least one carbon atom) and hydrazine.
申请公布号 JPS53109480(A) 申请公布日期 1978.09.25
申请号 JP19770023834 申请日期 1977.03.07
申请人 HITACHI LTD 发明人 SAIKI ATSUSHI;YAMANAKA ICHISUKE
分类号 H01L21/027;H01L21/302 主分类号 H01L21/027
代理机构 代理人
主权项
地址