| 发明名称 |
SEMICONDUCTOR DEIVCE AND ITS MANUFACTURE |
| 摘要 |
PURPOSE:To establish a plurality of MOS FET's having different threshold voltage each other and with less expensive, by setting the threshold voltage higher to the MOS FET formed with the upper layer gate electrode of the semiconductor device having a plurality of electrode layers. |
| 申请公布号 |
JPS53108383(A) |
申请公布日期 |
1978.09.21 |
| 申请号 |
JP19770022684 |
申请日期 |
1977.03.04 |
| 申请人 |
HITACHI LTD |
发明人 |
HORI RIYOUICHI;ITOU KIYOO;KUBO SEIJI;SUNAMI HIDEO;HASHIMOTO TETSUKAZU;NISHIMATSU SHIGERU |
| 分类号 |
H01L27/10;H01L21/8242;H01L27/088;H01L27/108;H01L29/78 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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