| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE |
| 摘要 |
PURPOSE:To prevent the surface of the first layer gate electrode from being simultaneously removed at photo etching of the second layer gate electrode, by inserting the second layer gate electrode between the first layer gate electrode and the Al film, to the part for the holes linking layers. |
| 申请公布号 |
JPS53108390(A) |
申请公布日期 |
1978.09.21 |
| 申请号 |
JP19770022681 |
申请日期 |
1977.03.04 |
| 申请人 |
HITACHI LTD |
发明人 |
HORI RIYOUICHI;KUBO SEIJI;HASHIMOTO TETSUKAZU;NISHIMATSU SHIGERU;ITOU KIYOO |
| 分类号 |
H01L27/10;H01L21/3213;H01L21/60;H01L21/768;H01L21/8242;H01L23/522;H01L27/108;H01L27/115;H01L29/78 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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