| 发明名称 |
Method for manufacture of a semiconductor device |
| 摘要 |
A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms.
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| 申请公布号 |
US4114254(A) |
申请公布日期 |
1978.09.19 |
| 申请号 |
US19760669326 |
申请日期 |
1976.03.22 |
| 申请人 |
SONY CORPORATION |
发明人 |
AOKI, TERUAKI;ABE, MOTOAKI |
| 分类号 |
H01L29/78;H01L21/00;H01L21/316;H01L21/331;H01L21/336;H01L29/00;H01L29/73;(IPC1-7):B01J17/00 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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