发明名称 |
Gate controlled diode protection for drain of IGFET |
摘要 |
An integrated circuit includes an insulated-gate field effect transistor and a protection device coupled to either the source or drain of the transistor. The protection device includes a gate-controlled diode having a breakdown voltage that is less than the breakdown voltage of the drain of the field effect transistor.
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申请公布号 |
US4115709(A) |
申请公布日期 |
1978.09.19 |
申请号 |
US19770768897 |
申请日期 |
1977.02.15 |
申请人 |
NIPPON ELECTRIC CO., LTD. |
发明人 |
INOUE, YASUKAZU;KIKUCHI, MASANORI |
分类号 |
H01L27/02;(IPC1-7):H01L27/04;H01L29/78;H01L29/90 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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