| 发明名称 |
GROWING METHOD FOR CUBIC BORON NITRIDE SINGLE CRYSTALS |
| 摘要 |
PURPOSE:To obtain colorless, transparent, high purity, cubic boron nitride single crystals by using ammonium borate as a flux when the crystals are grown in the thermodynamically stable zone of cubic boron nitride. |
| 申请公布号 |
JPS53106698(A) |
申请公布日期 |
1978.09.16 |
| 申请号 |
JP19770021525 |
申请日期 |
1977.03.02 |
| 申请人 |
HITACHI LTD |
发明人 |
KOBAYASHI TOSHIO;SUSA KENZOU |
| 分类号 |
C30B9/12;B01J3/06;C01B21/06;C30B29/38 |
主分类号 |
C30B9/12 |
| 代理机构 |
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代理人 |
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| 地址 |
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