| 发明名称 |
MANUFACTURE OF MOS SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain a high-resistance element of C-MOS without increasing the manufacturing processes, by altering part of the diffusion mask pattern to form a region where no P-type nor N-type impurity is not doped. |
| 申请公布号 |
JPS53105990(A) |
申请公布日期 |
1978.09.14 |
| 申请号 |
JP19770020221 |
申请日期 |
1977.02.28 |
| 申请人 |
HITACHI LTD |
发明人 |
NISHIMURA KOUTAROU;YASUI NORIMASA;MEGURO RIYOU |
| 分类号 |
H01L27/04;H01L21/3205;H01L21/822;H01L21/8238;H01L23/52;H01L29/78 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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