| 摘要 |
1524592 Bipolar transistor SONY CORP 21 April 1976 [30 April 1975] 16161/76 Heading H1K In a bipolar transistor which has differentially doped emitter regions 6, 7, collector regions 1, 2, 11, and base regions 3, 5, a semi-insulating layer 12 is formed in contact with a surface end of the collector-base junction, and an insulating layer 15 is formed in contact with the lightly doped emitter region 6, with the surface end of the emitter-base junction, and with the surface end of junction J B between regions 6 and 7. The semi-insulating layer 12 may be oxygendoped polycrystalline silicon, and the insulating layer 15 may be SiO 2 . The distance L from the emitter-base junction J E to the insulating layer 15 may be chosen to be smaller than the diffusion length for minority carriers in region 6.
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