| 摘要 |
<p>SEMICONDUCTOR SWITCH DEVICE A semiconductor switch device comprising a PNPN switch having an equivalent four-layer structure, a transistor, two impedance elements and a capacitive element, wherein the transistor and one of the impedance elements are connected in parallel with each other, the parallel circuit thus formed is connected between the P base and the N cathode of the PNPN switch, the capacitive element is connected between the base of the transistor and a terminal maintained at a constant potential, and the other impedance element is connected between the base and the emitter of the transistor, whereby the semiconductor switch has a high tolerance to dv/dt and can be closed with high sensitivity.</p> |
