| 发明名称 |
SEMICONDUCTOR MANUFACTURING METHOD USING BURIED NITRIDE FORMED BY A NITRIDATION TREATMENT IN THE PRESENCE OF ACTIVE NITROGEN |
| 摘要 |
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| 申请公布号 |
US4113515(A) |
申请公布日期 |
1978.09.12 |
| 申请号 |
US19760671419 |
申请日期 |
1976.03.29 |
| 申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
KOOI, ELSE;VANLIEROP, JOSEPH GIJSBERTUS |
| 分类号 |
H01L29/78;H01L21/00;H01L21/28;H01L21/283;H01L21/314;H01L21/316;H01L21/32;H01L21/329;H01L21/336;H01L21/768;H01L21/8234;H01L23/29;H01L27/088;H01L29/00;H01L29/51;(IPC1-7):H01L21/26;H01L21/31 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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