| 发明名称 |
PRODUCTION OF COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| 摘要 |
PURPOSE:To make a compound semiconductor light emitting elemet by vacuum depositing an impurity onto an N type substrate and forming an optimum impurity concentration and junction depth through heat treatment. |
| 申请公布号 |
JPS53103389(A) |
申请公布日期 |
1978.09.08 |
| 申请号 |
JP19770018421 |
申请日期 |
1977.02.22 |
| 申请人 |
SEIKO INSTR & ELECTRONICS |
发明人 |
ENDOU SHIGEKAZU |
| 分类号 |
H01L21/22;H01L21/225;H01L33/14;H01L33/30;H01L33/36 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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