发明名称 |
SEMICONDUCTOR RADIATION DETECTOR |
摘要 |
PURPOSE:To detect photoelectromotive force by radiations without external bias by forming a barrier through metal-semiconductor contact on the desired surface of a Si single crystal of more than 300OMEGAcm in specific resistance and more than 500mu seconds in carrier life.
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申请公布号 |
JPS53103386(A) |
申请公布日期 |
1978.09.08 |
申请号 |
JP19770017951 |
申请日期 |
1977.02.21 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
MATSUO NOBORU;KOBAYASHI TETSUJI;SUGITA TOORU |
分类号 |
G01T1/24;H01L31/00;H01L31/09 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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