Four transistor static bipolar memory cell using merged transistors

摘要

A bipolar memory cell of reduced size requires only four I2L operated transistors and three access lines. Two current injection transistors supply operating current to two inversely operated flip-flop transistors and also function as load devices as well as coupling devices. The three access lines conduct power to the cells as well as the signals for the write and read operations. A write operation is performed by ratioing the currents supplied to a memory cell array such that only a selected cell is written.