发明名称 |
Solder layer for a semi-conductor device consisting of at least one group V element, at least one rare element and aluminum |
摘要 |
A semi-conductor device comprising a silicon body having an exposed surface of N-type conductivity layer and a substrate bonded to the exposed surface by means of a layer of a new solder material, the solder material being an alloy consisting essentially of 2 to 12% by weight of at least one element of Group V of the periodic table, preferably antimony, and 0.01 to 5% by weight of at least one of rare earth elements, for example, Misch metal and aluminum being balance on the basis of total weight of the solder material. An increase in FVD of the device in which a conventional aluminum solder is used is prevented by the use of the new solder materials.
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申请公布号 |
US4110783(A) |
申请公布日期 |
1978.08.29 |
申请号 |
US19770766503 |
申请日期 |
1977.02.07 |
申请人 |
HITACHI, LTD. |
发明人 |
ONODERA, HISAKICHI;SUWA, MASATERU;ONUKI, JIN;SHIMIZU, YOSHITERU |
分类号 |
H01L21/52;B23K35/28;H01L23/488;H01L23/492;(IPC1-7):H01L23/48;H01L29/46;H01L29/62 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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