Bei tiefen Temperaturen arbeitende Einrichtung zum elektronischen Verstaerken oder Schalten

摘要

1,002,591. Superconductor devices. RADIO CORPORATION OF AMERICA. July 10, 1962 [July 31, 1961], No. 26565/62. Heading H1K. An electronic device comprises three regions (termed emitter base and collector regions) 21, 25, 29 of which the middle one at least is of superconducting material, the regions being separated by insulating layers 23, 27 sufficiently thin to permit quantum mechanical tunnelling. The energy gap of the middle region must be greater than that of the outer regions in the case where these latter are also superconducting. In one embodiment, all three regions are superconducting. The device should be operated at a temperature only slightly below the critical temperature of the outer regions so that these have an appreciable number of normal charge carriers, but at the same time sufficiently below the critical temperature of the middle region that the number of normal charge carriers therein is negligible. Assuming in the first instance that no control current flows in the centre region then with no voltage applied across the end regions, the energy gaps are opposite each other, and in particular the edges of the gaps of the outer regions (where there exists a maximum concentration of energy states) is opposite the forbidden zone of the inner region. When applied voltage across the outer regions brings the gaps into the relationship shown in Fig. 2b (not shown), to bring the edges of the gaps into coincidence electron tunnel current flows from region 21 via 25 to 29 (edges 65, 71) and hole tunnel current from 29 via 25 to 21 (edges 75, 69) to produce a maximum in the current/voltage curve 55, Fig. 3 (not shown). On further increasing voltage the edge 65 moves opposite a portion of the upper band of 25 containing fewer energy states so that the electron current decreases, and similarly for the hole current. On further increase of the voltage between regions 21, 29, edge 63 comes opposite edge 71, and edge 77 comes opposite edge 69 permitting holes to be injected into the lower allowed band of region 21 and electrons into the upper allowed band of region 29. The current thus increases again. When a control current is passed through region 25, this causes the edges 69 and 71 to become broadened and diffused, as indicated at 691, 711. This tends to flatten out and widen the negative resistance area of the current/ voltage curve as indicated at 57, Fig. 3. In a modified manner of use, the control voltage is applied between regions 21, 27 and the current to be controlled is passed transversely between the terminals 41, 43. The control signal injects normal carriers into the superconducting central region until eventually there are sufficient normal carriers to convert the central region to its normal non-superconducting state with corresponding drop in the transverse current. The device may be fabricated by depositing on a square substrate of borosilicate glass a diagonal strip of aluminium; oxidizing the top surface to form an insulating layer; depositing a lateral strip of lead; oxidizing its top surface to form a second insulating layer; and then depositing a second aluminium strip along the other diagonal, there thus being an area over which all three overlie to produce the adjacent regions of the device. The metals may be deposited from the vapour state using suitable masks. The oxidation may be by exposure of the metal to air, or may be effected chemically or electrolytically. Platinum electrodes are preformed on the substrate by applying a platinum paint or resinate to appropriate points and heating to cause decomposition and adherence of the platinum to the substrate. Alternatively, SiO or SiO 2 may be vapour deposited to provide the insulating layer. Alternatively, the insulator may be of barium or chromium stearate. Suitable superconducting elements are Tc, Nb, Pb, La, V, Ta, Hg, Sn, In, Tl, Re, Th, Al, Ga, Zn, U, Os, Zr, Cd, Ru, Ti and Hf.