发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PURPOSE:To establish the semiconductor laser element having a low threshold current and also having long life, by converting only the specified domain in the N type GaAlAs layer on the P type GaAs thin layer producing injecting light emission and laser oscillation into P type.
申请公布号 JPS5398790(A) 申请公布日期 1978.08.29
申请号 JP19770013582 申请日期 1977.02.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 IKEDA KENJI;SUZAKI WATARU;OOMURA ETSUJI
分类号 H01L33/14;H01L33/30;H01L33/36;H01S5/00 主分类号 H01L33/14
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