发明名称 |
Charge-coupled device |
摘要 |
The invention relates to a charge-coupled device in which the charge transport takes place in the form of majority charge carriers via the bulk of a surface layer of the first conductivity type which forms a p-n junction with a substrate of the second conductivity type. The comparatively thick and high-ohmic surface layer has a comparatively thin low-ohmic buried zone of the first conductivity type which adjoins the said p-n junction. The buried zone forms a buffer layer against the depletion zone belonging to the p-n junction. Without detrimentally influencing the transport properties, a low-ohmic substrate may be used, which has important advantages in particular with respect to the leakage currents.
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申请公布号 |
US4110777(A) |
申请公布日期 |
1978.08.29 |
申请号 |
US19750545408 |
申请日期 |
1975.01.30 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
ESSER, LEONARD JAN MARIA;THEUNISSEN, MATTHIAS JOHANNES JOSEPH |
分类号 |
H01L29/762;H01L21/339;H01L29/10;H01L29/768;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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