| 发明名称 |
SEMICONDUCTOR MEMORY CELL |
| 摘要 |
PURPOSE:To decrease the area of the memory cell and to obtain a small-size memory cell, by securing a double structure by overlapping up and down at the same region the two kinds of the resistance in a semiconductor memory cell. |
| 申请公布号 |
JPS5397343(A) |
申请公布日期 |
1978.08.25 |
| 申请号 |
JP19770011690 |
申请日期 |
1977.02.07 |
| 申请人 |
HITACHI LTD |
发明人 |
HONMA NORIYUKI;YAMAGUCHI KUNIHIKO |
| 分类号 |
G11C11/411;H01L21/822;H01L21/8222;H01L21/8229;H01L27/04;H01L27/082;H01L27/102 |
主分类号 |
G11C11/411 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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