| 摘要 |
High density self-scanning photo-sensitive circuits employ a voltage transfer mode with charge amplification. The circuits include a field effect transistor and a capacitor coupled from the gate electrode of the transistor through a diode to the source electrode of the transistor. A photodiode is connected to the gate electrode of the transistor. Means are provided for precharging the capacitor to substantially the threshold voltage of the transistor while applying an additional constant voltage of predetermined magnitude to the gate electrode to operate the transistor in its linear region. An analog signal from the photo-diode is also applied to the gate electrode of the transistor which is amplified by the transistor with little or no threshold voltage loss. In a preferred array of these circuits, the photo-diodes or light sensitive devices are arranged linearly, in quantities of a thousand or more, and video signals from alternate devices are coupled to one or two common busses through individual gating transistors. |
