发明名称 Plating method for memory elements
摘要 A method for electroplating in a single electroplating bath comprising varying the electric current density so that a non-magnetic plated film and a ferromagnetic plated film are selectively deposited. To achieve this effect the electroplating bath must contain at least about 1 g/l NaH2PO2.H2O.
申请公布号 US4108739(A) 申请公布日期 1978.08.22
申请号 US19770786926 申请日期 1977.04.12
申请人 FUJI PHOTO FILM CO., LTD. 发明人 TADOKORO, EIICHI;KITAMOTO, TATSUJI
分类号 C25D3/56;C25D5/10;(IPC1-7):C25D3/56;C25D5/14 主分类号 C25D3/56
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