| 发明名称 |
MANUFACTURE FOR SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE:To reduce the life time of minority carrier to a desired vale without increasing reverse leakage current, by exposing the semiconductor substrate in which exposed terminal of PN junction is covered with glass insulator to radiant ray while heating.</p> |
| 申请公布号 |
JPS5395581(A) |
申请公布日期 |
1978.08.21 |
| 申请号 |
JP19770009682 |
申请日期 |
1977.02.02 |
| 申请人 |
HITACHI LTD |
发明人 |
TANAKA TOMOYUKI;SHIRASAWA TOSHIKATSU;OKAMURA MASAHIRO;OGAWA TAKUZOU |
| 分类号 |
H01L29/73;H01L21/26;H01L21/263;H01L21/322;H01L21/331;H01L21/56;H01L23/31;H01L29/74;H01L29/861 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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