| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To realize a high-reliable dynamic memory by providing the read-write gate extended from the top of the capacitor electrode of a dummy cell and by using the dummy cell where no junction capacitor, etc., resides. |
| 申请公布号 |
JPS5394734(A) |
申请公布日期 |
1978.08.19 |
| 申请号 |
JP19770008699 |
申请日期 |
1977.01.31 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
OGURA ISAO;MASUOKA FUJIO |
| 分类号 |
G11C11/401;G11C11/404;H01L21/8242;H01L27/10;H01L27/108;H01L29/78 |
主分类号 |
G11C11/401 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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