| 发明名称 |
DIREKTBANDABSTANDS-HALBLEITERBAUELEMENT |
| 摘要 |
Devices using a transparent conductive layer of indium oxide or indium tin oxide, and a layer of a direct gap semiconductor material have been found to operate as solar cells and as light emitting devices. Exemplary of such devices is an indium tin oxide/p-InP cell which shows a 12.5% solar power conversion efficiency and also emits a red colored light when biased. |
| 申请公布号 |
DE2805582(A1) |
申请公布日期 |
1978.08.17 |
| 申请号 |
DE19782805582 |
申请日期 |
1978.02.10 |
| 申请人 |
WESTERN ELECTRIC CO.,INC. |
发明人 |
JURGEN BACHMANN,KLAUS;HERMAN SCHMIDT,PAUL;GUERRANT SPENCER,EDWARD;SREE HARSHA,KARNAMADAKALA SREENIVASAACHARLU |
| 分类号 |
H01L31/04;H01L31/072;H01L33/00 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 地址 |
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