发明名称 |
VERFAHREN UND SCHALTUNGSANORDNUNG ZUM SCHUTZ EINES TRANSISTORS VOR THERMISCHER ZERSTOERUNG |
摘要 |
<p>The power transistor circuit has a stage that will guarantee protection against thermal overload without any time delay. A barrier layer for blocking the flow of energy can be set at an predetermined temperature. The base-emitter voltage of the transistor to be protected is compared with an internal reference voltage in a comparator. The result triggers a cut-out system, when a given voltage is exceeded. There is a thermally decoupled transistor (2) immediately in front of the protected transistor (1). There is a third transistor (3) which supplies the base current for the first two transistors. The third transistor is controlled via a drop resistor (7). An additional resistor (6) switches on the required base current again, and two diodes (4, 5) the short circuit current.</p> |
申请公布号 |
DE2705583(A1) |
申请公布日期 |
1978.08.17 |
申请号 |
DE19772705583 |
申请日期 |
1977.02.10 |
申请人 |
SIEMENS AG |
发明人 |
HOLZNER,FRANZ,ING.;TRINKWITZ,WOLFGANG,DIPL.-ING. |
分类号 |
H03F1/52;H03K17/082;(IPC1-7):H01L23/56;H02H7/20 |
主分类号 |
H03F1/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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