发明名称 VERFAHREN UND SCHALTUNGSANORDNUNG ZUM SCHUTZ EINES TRANSISTORS VOR THERMISCHER ZERSTOERUNG
摘要 <p>The power transistor circuit has a stage that will guarantee protection against thermal overload without any time delay. A barrier layer for blocking the flow of energy can be set at an predetermined temperature. The base-emitter voltage of the transistor to be protected is compared with an internal reference voltage in a comparator. The result triggers a cut-out system, when a given voltage is exceeded. There is a thermally decoupled transistor (2) immediately in front of the protected transistor (1). There is a third transistor (3) which supplies the base current for the first two transistors. The third transistor is controlled via a drop resistor (7). An additional resistor (6) switches on the required base current again, and two diodes (4, 5) the short circuit current.</p>
申请公布号 DE2705583(A1) 申请公布日期 1978.08.17
申请号 DE19772705583 申请日期 1977.02.10
申请人 SIEMENS AG 发明人 HOLZNER,FRANZ,ING.;TRINKWITZ,WOLFGANG,DIPL.-ING.
分类号 H03F1/52;H03K17/082;(IPC1-7):H01L23/56;H02H7/20 主分类号 H03F1/52
代理机构 代理人
主权项
地址
您可能感兴趣的专利