Thyristor containing integrated circuit - has opposite conductivity semiconductor zones deposited in thyristor anode zone, short circuited with anode

摘要

The anode of the thyristor, which is contained in an integrated circuit, has at least one semiconductor zone deposited inside its region, which has an opposite conductivity. This semiconductor zone is short circuited with the anode, being preferably coupled to it by a metal coating. The configuration of this zone may reduce the hole injection of the anode zone in a limited anode-gate region. This reducing effect may be provided by selective doping and geometric dimensions of the semiconductor zone. It may permit the thyristor ignition and its maintenance in the forward switching direction. Typically the zone is more highly doped than the anode which may be p-conductive. Alternately several zones of opposite conductivity may be deposited in the anode, these zones being connected to the anode and to each other by a metal coating.