<p>A first current is applied to the joined emitter electrodes of a first and a second transistor to be split into a first and a second fractions related in the ratio hfen to 1, which fractions flow as their respective collector currents. (The common-emitter forward current gain of the first transistor is hfe.) A first and a second paths extend from a common connection to respective base electrodes of the first and second transistors. Each path includes n junction diode(s) connected in series with the base-emitter junction of the transistor to which the path connects. A second current related to the first is applied to the second path to apply additional forward bias to the n diode(s) therein.</p>
