| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR MEMORY UNIT |
| 摘要 |
PURPOSE:To decrease the capacity between the bit wire and the word wire by forming the insulator film between these two wires with the oxide film of polycrystal Si. |
| 申请公布号 |
JPS5390887(A) |
申请公布日期 |
1978.08.10 |
| 申请号 |
JP19770004926 |
申请日期 |
1977.01.21 |
| 申请人 |
HITACHI LTD |
发明人 |
MASUDA HIROO;SUNAMI HIDEO |
| 分类号 |
H01L27/10;G11C11/40;H01L21/8242;H01L27/04;H01L27/108;H01L29/78 |
主分类号 |
H01L27/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
