发明名称 IC
摘要 An integrated logic circuit includes an array of insulated gate field effect transistors formed at the crossings of a plurality of substantially parallel first conductor tracks which form the transistor gate electrodes and a plurality of substantially parallel strip-shaped surface regions which form the source and drain electrode regions of the transistors. The field effect transistors of the device include a first group of transistors having a first threshold voltage and a second group of transistors having a second threshold voltage different from the first. In order to make a more compact, easily-designed and easily-manufactured circuit, the conductor tracks and the strip-shaped surface regions form a nonuniform array in which the track and surface regions need not all be of the same length. Further efficiencies are achieved by branching the strip-shaped surface regions where appropriate to implement the desired logic combination.
申请公布号 JPS5390778(A) 申请公布日期 1978.08.09
申请号 JP19780002860 申请日期 1978.01.17
申请人 PHILIPS NV 发明人 ROURENSU FUREDERITSUKU JII;DENISU BURAIAN JIYAABISU;KURISUTOFUAA JIYON ARUDOHAUSU
分类号 H01L21/82;H01L21/822;H01L21/8246;H01L21/8247;H01L27/04;H01L27/088;H01L27/112;H01L29/78;H01L29/788;H01L29/792;H03K19/0944;H03K19/096 主分类号 H01L21/82
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