| 摘要 |
A readout device is disclosed which comprises a substrate of semiconductive material having a source and drain region formed therein. These regions of the device are placed adjacent to the surface of a dielectric storage medium, selective portions of which, i.e. selective storage locations, are electrostatically charged. The dielectric storage medium has a layer of conductive material formed thereon to which a signal is applied in order to determine whether the storage location being accessed is charged, and, in one embodiment, to determine what the magnitude of that charge might be.
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