| 摘要 |
A zener diode comprises a reverse biased pn junction having a p-type layer on one side of the junction and two successive n-type depletion layers on the opposite side of the junction with the n-type layer adjacent the junction being more heavily doped than the other n-type layer. The more heavily doped n-type layer determines the temperature co-efficient of the breakdown voltage and the other n-type layer contributes to the total value of the breakdown voltage.
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