| 发明名称 |
NONNVOLATILE MEMORY ELEMENT |
| 摘要 |
<p>PURPOSE:To lower driving voltage by interferring the carriers produced by forward bias with the transistor part formed by a pair of opposite conductivity type region and a floating gate.</p> |
| 申请公布号 |
JPS5388583(A) |
申请公布日期 |
1978.08.04 |
| 申请号 |
JP19770003404 |
申请日期 |
1977.01.13 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
WADA TOSHIO |
| 分类号 |
G11C17/00;G11C16/04;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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