发明名称 COMPLEMENTARY TYPE FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To eliminate the need for formation of contact parts and increase the scale of integration by simultaneously forming part or the whole of gate, source and drain electrodes and wirings by using high melting point metals or their silicides.
申请公布号 JPS5388581(A) 申请公布日期 1978.08.04
申请号 JP19770002479 申请日期 1977.01.14
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 SHIBATA KENJI;MOCHIZUKI TOORU
分类号 H01L29/78;H01L21/8238;H01L27/092 主分类号 H01L29/78
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