发明名称 |
COMPLEMENTARY TYPE FIELD EFFECT TRANSISTOR |
摘要 |
PURPOSE:To eliminate the need for formation of contact parts and increase the scale of integration by simultaneously forming part or the whole of gate, source and drain electrodes and wirings by using high melting point metals or their silicides. |
申请公布号 |
JPS5388581(A) |
申请公布日期 |
1978.08.04 |
申请号 |
JP19770002479 |
申请日期 |
1977.01.14 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
SHIBATA KENJI;MOCHIZUKI TOORU |
分类号 |
H01L29/78;H01L21/8238;H01L27/092 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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