| 发明名称 |
NONNVOLATILE MEMORY ELEMENT |
| 摘要 |
PURPOSE:To readily form a semiconductor element as a non-volatile memory by providing a mask matching the desired signal patterns on the top of the semiconductor element and radiating light therethrough. |
| 申请公布号 |
JPS5387190(A) |
申请公布日期 |
1978.08.01 |
| 申请号 |
JP19770001755 |
申请日期 |
1977.01.11 |
| 申请人 |
SONY CORP |
发明人 |
NAGUMO FUMIO |
| 分类号 |
G11C17/00;G11C11/42;G11C27/04;H01L21/339;H01L21/8247;H01L27/148;H01L29/762;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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