| 发明名称 |
PLANAR TYPE SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain a planar type device of superior reverse characteristics by forming a surface region of a relatively high concentration on the surface portion of a relatively low impurity concentration adjoining to pn junctions. |
| 申请公布号 |
JPS5387183(A) |
申请公布日期 |
1978.08.01 |
| 申请号 |
JP19770001800 |
申请日期 |
1977.01.11 |
| 申请人 |
HITACHI LTD |
发明人 |
MURAKAMI SUSUMU;HOSOKAWA YOSHIKAZU |
| 分类号 |
H01L29/73;H01L21/331;H01L29/74 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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