发明名称 |
SEMICONDUCTOR PELLET FORMING METHOD |
摘要 |
<p>PURPOSE:To reduce cracking defects and remove broken layers formed on the back along scribe scores without giving any effect on element forming regions by abolishing cracking the wafer from its element formed surface and cracking it from its back.</p> |
申请公布号 |
JPS5386569(A) |
申请公布日期 |
1978.07.31 |
申请号 |
JP19770001183 |
申请日期 |
1977.01.11 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
OGINO MASANOBU |
分类号 |
H01L21/301;H01L21/302;H01L21/78 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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