发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To produce the device with high accuracy and good reproducibility of the capacity values between transfer electrodes and substrate by forming first electrodes in self-slignment, forming second electrodes through etching of the substrate and making the second electrodes by way of insulation films in the etched portions.
申请公布号 JPS5386586(A) 申请公布日期 1978.07.31
申请号 JP19770001157 申请日期 1977.01.11
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 SATOU SHIGERU
分类号 H01L29/762;H01L21/306;H01L21/339;H01L21/8247;H01L29/51;H01L29/788;H01L29/792 主分类号 H01L29/762
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