发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To produce the device with high accuracy and good reproducibility of the capacity values between transfer electrodes and substrate by forming first electrodes in self-slignment, forming second electrodes through etching of the substrate and making the second electrodes by way of insulation films in the etched portions. |
申请公布号 |
JPS5386586(A) |
申请公布日期 |
1978.07.31 |
申请号 |
JP19770001157 |
申请日期 |
1977.01.11 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
SATOU SHIGERU |
分类号 |
H01L29/762;H01L21/306;H01L21/339;H01L21/8247;H01L29/51;H01L29/788;H01L29/792 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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