| 摘要 |
1465709 Thyristors BORG-WARNER CORP 23 April 1974 [8 June 1973] 17732/74 Heading H1K A thyristor 30 comprises a PNPN structure in which the outer P and N layers 11, 14 have ohmic contacts which respectively form the anode 15, 15<SP>1</SP> and cathode, and the inner N layer 12 has an ohmic contact 25 which forms the anode gate, and is thicker than any other layer in the thyristor body. The gate electrode 25 may be annular, interdigitated or comprise islands distributed over the gate region 12 and the thyristor 30 may be mounted on a molybdenum base 27 using a gold/antimony preform 28. Two circuits are used to turn the thyristor on and off and a sweep circuit is used to sweep out charge carriers near the centre PN junction to reduce the switching time. The thyristor is formed from a silicon body doped with phosphorus and boron, the doping concentrations in the layers 11, 13, 14 being Gaussian. |
