| 摘要 |
<p>A dynamic memory system with random access uses LSI MOSFET technology with a dynamic push-pull reading amplifier. Multiple digit lines are connected to one push-pull amplifier and the speed of operation is increased by a reduction in bias period and reading time. True and complementary digit lines are connected through resistances to the inputs of an amplifier consisting of cross-coupled transistors which connect the inputs to a switching point. The input resistances preferably consist of transistors with a common gate; the digit lines are biassed to the drain supply voltage and the input transistor gates are bootstrapped to a higher voltage to transfer the different potential on the digit lines to the inout points of the reading amplifier, and the digit lines are rapidly discharged to earth.</p> |
